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VW 2x30
Symbol
Conditions
Characteristic Values
10
I D , I R
T VJ = T VJM ; V R = V RRM ; V D = V DRM
<
5
mA
V
1: I GT , T VJ = 125°C
2: I GT , T VJ = 25°C
V T
I T
= 45 A; T VJ = 25°C
<
1.81
V
V G
3: I GT , T VJ = -40°C
V T0
r T
For power-loss calculations only
0.8
25
V
m Ω
V GT
V D = 6 V
T VJ = 25°C
T VJ = -40°C
<
<
1.5
1.6
V
V
1
2
3
5
6
I GT
V GD
V D = 6 V
T VJ = T VJM
T VJ = 25°C
T VJ = -40°C
V D = 2/3 V DRM
<
<
<
100
200
0.2
mA
mA
V
1
4
I GD
<
5
mA
4: P GAV = 0.5 W
I L
T VJ = 25°C; t P = 10 μs
I G = 0.45 A; di G /dt = 0.45 A/μs
<
450
mA
0.1
I GD , T VJ = 125°C
5: P GM = 5 W
6: P GM = 10 W
I H
T VJ = 25°C; V D = 6 V; R GK = ∞
<
200
mA
1
10
100
1000
I G
mA
t gd
T VJ = 25°C; V D = ?V DRM
<
2
μs
Fig. 1 Gate trigger characteristics
I G = 0.45 A; di G /dt = 0.45 A/μs
t q
T VJ = T VJM ; I T = 20 A; t P = 200 μs; di/dt = -10 A/μs
typ.
150
μs
1000
V R = 100 V; dv/dt = 15 V/μs; V D = 2 / 3 V DRM
T VJ = 25°C
R thJC
per thyristor; DC
1.7
K/W
μ s
R thJK
per module
per thyristor; DC
per module
0.43
2.0
0.5
K/W
K/W
K/W
t gd
100
typ.
Limit
d S
d A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s 2
10
1
Dimensions in mm (1 mm = 0.0394")
10
100
I G
mA 1000
Fig. 2 Gate trigger delay time
G
50
A
45
I F 40
35
30
25
20
140
A
120
I RMS
100
80
60
T VJ = 125°C
T K = 85°C
15
T VJ =125°C
T VJ = 25°C
40
10
20
5
0
0
VW2x30
0.0
0.5
1.0
1.5
V
2.0
0.01
0.1
1
s
10
V T
Fig. 3 Forward current vs.
voltage drop per leg
IXYS reserves the right to change limits, test conditions and dimensions
? 2008 IXYS All rights reserved
t
Fig. 4 Rated RMS current vs. time
(360° conduction)
20080828a
2-3
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